MRF5P21180 Datasheet, PDF (6/8 Pages) Motorola, Inc – SEMICONDUCTOR TECHNICAL DATA

40
15
V_DD 28 Vdc, I_DQ 1600 mA
35 f1 2135 MHz, f2 2145 MHz
20
2 x W CDMA, 10 MHz @ 3.84 MHz Bandwidth
30 _{Peak/Avg. 8.5 dB @ 0.01% Probability (CCDF)}
25
25
30
20
35
15
G_ps
η
IM3
40
10
45
ACPR
5
50
0
4
6 8 10
55
30
50
P_out, OUTPUT POWER (WATTS) W CDMA
Figure 8. 2–Carrier W–CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
20
3.84 MHz
30
Channel BW
40
50
60
70
80
90
ACPR @ +ACPR @
100 _{IM3 @}
3.84 MHz BW 3.84 MHz BW
110 ^{3.84 MHz BW}
120
25 20 15 10 5 0 5 10
+IM3 @
3.84 MHz BW
15 20 25
f, FREQUENCY (MHz)
Figure 9. 2-Carrier W-CDMA Spectrum
100
10
1
0.1
0.01
0.001
0.0001
0
2
4
6
8
10
PEAK TO AVERAGE (dB)
Figure 10. CCDF W–CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
10⁹
10⁸
10⁷
10⁶
100
120
140
160
180
200 220
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTBF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by I_D2 for MTBF in a particular application.
Figure 11. MTBF Factor versus Junction Temperature
MRF5P21180
6
MOTOROLA RF DEVICE DATA