MRF5P21180 Datasheet, PDF (2/8 Pages) Motorola, Inc – SEMICONDUCTOR TECHNICAL DATA

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 180 W CW
Case Temperature 80°C, 38 W CW
Symbol
R_θJC
Max
0.40
0.40
Unit
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS (1)
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0)
Gate–Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
I_DSS
—
I_GSS
—
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 200 µAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 800 mAdc)
Drain–Source On–Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2 Adc)
V_GS(th)
2.5
V_GS(Q)
—
V_DS(on)
—
g_fs
—
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
Typ
—
—
—
2.8
3.6
0.26
5
1.7
Max
Unit
10
µAdc
1
µAdc
1
µAdc
3.5
Vdc
—
Vdc
0.3
Vdc
—
S
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(V_DD = 28 Vdc, P_out = 38 W Avg., I_DQ = 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
G_ps
12.5
14
—
dB
Drain Efficiency
(V_DD = 28 Vdc, P_out = 38 W Avg., I_DQ = 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
η
23
25.5
—
%
Third Order Intermodulation Distortion
IM3
(V_DD = 28 Vdc, P_out = 38 W Avg., I_DQ = 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 –10 MHz
and f2 +10 MHz referenced to carrier channel power.)
—
–37.5
–35
dBc
Adjacent Channel Power Ratio
ACPR
—
(V_DD = 28 Vdc, P_out = 38 W Avg., I_DQ = 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 – 5 MHz
and f2 +5 MHz.)
–41
–38
dBc
Input Return Loss
(V_DD = 28 Vdc, P_out = 38 W Avg., I_DQ = 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
IRL
—
–14
–9
dB
(1) Each side of device measured separately. Part is internally matched both on input and output.
(2) Measurements made with device in push–pull configuration.
MRF5P21180
2
MOTOROLA RF DEVICE DATA