MRF20030 Datasheet, PDF (6/10 Pages) Motorola, Inc – RF POWER TRANSISTOR

4
11 _{Pout = 30 W (PEP)}
38
3.5
MTBF LIMITED
3
Tflange = 75°C
VCC = 26 Vdc
ICQ = 125 mA
10.5
Gpe
36
2.5
Tflange = 100°C
2
10
34 1.7:1
1.5
η
1
0.5
TJ = 175°C
0
0
4
8
12
16
20
24
VCE, COLLECTOR SUPPLY VOLTAGE (Vdc)
9.5
9
28 1800
VSWR
1850
1900
1950
f, FREQUENCY (MHz)
32
28 1.1:1
2000
Figure 9. DC Class A Safe Operating Area
Figure 10. Performance in Broadband Circuit
60
40
FUNDAMENTAL
20
0
– 20
– 40
0
3rd Order
VCC = 24 Vdc
ICQ = 1.8 Adc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
10
20
30
40
50
Pin, INPUT POWER (dBm)
Figure 11. Class A Third Order Intercept Point
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1.E+02
0
50
100
150
200
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTBF in hours x ampere2
emitter current. Life tests at elevated temperatures have correlated
to better than ±10% of the theoretical prediction for metal failure.
Divide MTBF factor by IC2 for MTBF in a particular application.
Figure 12. MTBF Factor versus
Junction Temperature
MRF20030
6
MOTOROLA RF DEVICE DATA