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MRF20030 Datasheet, PDF (5/10 Pages) Motorola, Inc – RF POWER TRANSISTOR
TYPICAL CHARACTERISTICS
35
30
Pout
25
20
Gpe
15
10
VCC = 26 Vdc
5
ICQ = 125 mA
f = 2000 MHz Single Tone
0
0
1
2
3
4
Pin, INPUT POWER (WATTS)
11.5
40
11
35 Pin = 3.5 W
10.5
30
25
10
20
9.5
15
9
10
8.5
5
2.5 W
1.5 W
VCC = 26 Vdc
ICQ = 125 mA
8
0
5
1800
1850
1900
1950
2000
f, FREQUENCY (MHz)
Figure 3. Output Power & Power Gain
versus Input Power
Figure 4. Output Power versus Frequency
– 20
– 30 3rd Order
– 40 5th Order
– 50 7th Order
– 60
– 70
0
VCC = 26 Vdc
ICQ = 125 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
5
10 15
20 25 30 35 40
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
11.5
–5
11
–10
10.5
–15
Gpe
10
–20
9.5
–25
9
–30
IMD
8.5
Pout = 30 W (PEP)
–35
ICQ = 125 mA
8
f1 = 2000.0 MHz
–40
f2 = 2000.1 MHz
7.5
–45
18
20
22
24
26
28
VCC, COLLECTOR SUPPLY VOLTAGE (Vdc)
Figure 6. Power Gain and Intermodulation
Distortion versus Supply Voltage
– 25
– 30
– 35 ICQ = 75 mA
– 40
– 45 125 mA
– 50
250 mA
– 55
400 mA
– 60
0.01
0.1
VCC = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1.0
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion
versus Output Power
12
ICQ = 400 mA
11
250 mA
10
9
125 mA
8
7
6
5
75 mA
0.01
0.1
VCC = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1.0
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain versus Output Power
MOTOROLA RF DEVICE DATA
MRF20030
5