MMUN2111LT1 Datasheet, PDF (6/10 Pages) Motorola, Inc – PNP SILICON BIAS RESISTOR TRANSISTOR

MMUN2111LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2113LT1
1
IC/IB = 10
0.1
1000
TA = –25°C _25°C
75°C
100
TA = 75°C
25°C
–25°C
0.01
0
1
0.8
0.6
0.4
0.2
0
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
f = 1 MHz
lE = 0 V
TA = 25°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
10
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
100
TA = 75°C
25°C
10
–25°C
1
0.1
0.01
VO = 5 V
0.001
0 12
34 5 67 8
Vin, INPUT VOLTAGE (VOLTS)
9 10
Figure 15. Output Current versus Input Voltage
100
VO = 2 V
TA = –25°C
25°C
10
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data