MMUN2111LT1 Datasheet, PDF (4/10 Pages) Motorola, Inc – PNP SILICON BIAS RESISTOR TRANSISTOR

MMUN2111LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111LT1
250
200
150
100
50
0
–50
1000
100
R_θJA = 625°C/W
1
IC/IB = 10
0.1
TA = –25°C
25°C
75°C
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
VCE = 10 V
TA = 75°C
25°C
–25°C
0.01
0
4
3
2
20
40
60
80
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
f = 1 MHz
lE = 0 V
TA = 25°C
1
10
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
75°C
25°C
10
TA = –25°C
1
0.1
0.01
0.001
01
VO = 5 V
2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
0
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
100
VO = 0.2 V
10
1
TA = –25°C
25°C
75°C
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data