MMDF3N03HD Datasheet, PDF (6/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS

MMDF3N03HD
100
VGS = 20 V
SINGLE PULSE
10 ^{TC = 25°C}
10 µs
100 µs
1 ms
10 ms
1
dc
RDS(on) LIMIT
0.1
THERMAL LIMIT
PACKAGE LIMIT
Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06”
thick single sided) with one die operating, 10s max.
0.01
0.1
1
10
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
350
ID = 9 A
300
250
200
150
100
50
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
TYPICAL ELECTRICAL CHARACTERISTICS
10
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1.0E–05
SINGLE PULSE
1.0E–04
Normalized to θja at 10s.
Chip 0.0175 Ω 0.0710 Ω 0.2706 Ω 0.5776 Ω 0.7086 Ω
0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F _Ambient
1.0E–03
1.0E–02
1.0E–01
t, TIME (s)
1.0E+00
Figure 14. Thermal Response
1.0E+01
1.0E+02
1.0E+03
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 15. Diode Reverse Recovery Waveform
6
Motorola TMOS Power MOSFET Transistor Device Data