MJE18009 Datasheet, PDF (6/10 Pages) Motorola, Inc – POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS

MJE18009 MJF18009
160
IC = 3 A
140
120
TYPICAL SWITCHING CHARACTERISTICS
400
TJ = 125°C
TJ = 25°C
IC = 3 A
300
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
100
80
IBoff = IC/2
60
VCC = 15 V
VZ = 300 V
40 ^{LC = 200 µH}
34 5 6
IC = 6.5 A
7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
200
IC = 6.5 A
100
3
TJ = 125°C
TJ = 25°C
5
7
9
11
hFE, FORCED GAIN
13
15
Figure 14. Inductive Crossover Time
100
5 ms 1 ms
10
1
MJE18009–DC
0.1
TYPICAL CHARACTERISTICS
12
1 µs
10 µs
EXTENDED
8
SOA
4
TC ≤ 125°C
GAIN ≥ 4
LC = 500 µH
–5 V
MJF18009–DC
0.01
10
100
1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
0
0V
–1.5 V
200
500
800
1100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 16. Reverse Bias Switching Safe
Operating Area
1.0
SECOND
0.8
BREAKDOWN
DERATING
0.6
0.4
0.2
THERMAL
DERATING
0
20 40
60
80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC–VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate. The data of
Figure 15 is based on TC = 25°C; TJ(pk) is variable
depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% but must be derated when
TC > 25°C. Second breakdown limitations do not derate the
same as thermal limitations. Allowable current at the
voltages shown on Figure 15 may be found at any case
temperature by using the appropriate curve on Figure 17.
TJ(pk) may be calculated from the data in Figures 20 and
21. At any case temperatures, thermal limitations will
reduce the power that can be handled to values less than
the limitations imposed by second breakdown. For induc-
tive loads, high voltage and current must be sustained
simultaneously during turn–off with the base–to–emitter
junction reverse biased. The safe level is specified as a
reverse–biased safe operating area (Figure 16). This rating
is verified under clamped conditions so that the device is
never subjected to an avalanche mode.
6
Motorola Bipolar Power Transistor Device Data