MJE18009 Datasheet, PDF (1/10 Pages) Motorola, Inc – POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™ Designer's Data Sheet
SWITCHMODE™ NPN Silicon
Planar Power Transistor
The MJE/MJF18009 has an application specific state–of–the–art die designed for
use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light
ballast”). These high voltage/high speed transistors exhibit the following main
features:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Full Characterization at 125_C
• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ • Specified Dynamic Saturation Data
• Two Package Choices: Standard TO–220 or Isolated TO–220
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Sustaining Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Breakdown Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Breakdown Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{— Peak(1)}
VCEO
VCES
VCBO
VEBO
IC
ICM
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current — Continuous}
IB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{— Peak(1)}
IBM
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Total Device Dissipation @ TC = 25°C
PD
*Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Temperature}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{RMS Isolation Voltage (2)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(1s, 25°C, Humidity ≤ 30%)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{TC = 25°C}
Per Figure 22
Per Figure 23
Per Figure 24
TJ, Tstg
VISOL1
VISOL2
VISOL3
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance — Junction to Case
— Junction to Ambient
R_θJC
R_θJA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum Lead Temperature for Soldering}
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Purposes: 1/8″ from Case for 5 Seconds}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{v (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.}
MJE18009 MJF18009
450
1000
1000
9
10
20
4
8
150
50
1.2
0.4
– 65 to 150
4500
3500
1500
MJE18009 MJF18009
0.83
2.5
62.5
62.5
260
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
_C
V
Unit
_C/W
_C
(2) Proper strike and creepage distance must be provided.
Order this document
by MJE18009/D
MJE18009
MJF18009
POWER TRANSISTORS
10 AMPERES
1000 VOLTS
50 and 150 WATTS
CASE 221A–06
TO–220AB
CASE 221D–02
TO–220 FULLPACK
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
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