MRF5P21240R6 Datasheet, PDF (5/8 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTOR

Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
15
40
14
35
13 ^Gps
30
12 η
11
10 _IRL
9
25
V_DD = 28 Vdc, P_out = 52 W (Avg.), I_DQ = 2200 mA ₂₀
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
-25
-5
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) _-30
-10
8 _IM3
-35
-15
7
6 ^ACPR
-40
-20
-45
-25
5
-50
-30
2080 2100
2120
2140
2160
2180 2200
f, FREQUENCY (MHz)
Figure 3. 2–Carrier W–CDMA Broadband Performance
14
I_DQ = 2640 mA
2420 mA
13.5 2200 mA
13 1980 mA
1760 mA
12.5
12
2
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two–Tone Power Gain versus
Output Power
-25
3rd Order
-30
-35
-40 _{5th Order}
-45 _{7th Order}
-50
-55
0.1
V_DD = 28 Vdc, P_out = 240 W (PEP), I_DQ = 2200 mA
Two-Tone Measurements, Center Frequency = 2140 MHz
1
10
30
TWO-TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
-25
-30
-35
-40
2200 mA
-45
I_DQ = 2640 mA
2420 mA
-50 ^{1980 mA}
1760 mA
-55
2
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
60
59
Ideal
58
P3dB = 55.03 dBm (318.24 W)
57
56
P1dB = 54.36 dBm (272.9 W)
55
Actual
54
53
52
V_DD = 28 Vdc, I_DQ = 2200 mA
51
Pulse CW, 8 µsec(on), 1.6 msec(off)
Center Frequency = 2140 MHz
50
36 37 38 39 40 41 42 43 44 45 46
P_in, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
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Go to: www.freescale.com
MRF5P21240R6
5