MRF5P21240R6 Datasheet, PDF (2/8 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTOR

Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M3 (Minimum)
C6 (Minimum)
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate–Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 300 µAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1100 mAdc)
Drain–Source On–Voltage
(V_GS = 10 Vdc, I_D = 3 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 3 Adc)
I_DSS
—
I_DSS
—
I_GSS
—
V_GS(th)
2
V_GS(Q)
3
V_DS(on)
—
g_fs
—
—
10
µAdc
—
1
µAdc
—
1
µAdc
2.8
4
Vdc
3.8
5
Vdc
0.26
0.3
Vdc
7.5
—
S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
C_rss
—
2.75
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
2–Carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. ratio = 8.5 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(V_DD = 28 Vdc, P_out = 52 W Avg., I_DQ = 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
G_ps
12
13
—
dB
Drain Efficiency
(V_DD = 28 Vdc, P_out = 52 W Avg., I_DQ = 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
η
22.5
24
—
%
Third Order Intermodulation Distortion
IM3
—
–36
–34
dBc
(V_DD = 28 Vdc, P_out = 52 W Avg., I_DQ = 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 –10 MHz
and f2 +10 MHz)
Adjacent Channel Power Ratio
ACPR
—
(V_DD = 28 Vdc, P_out = 52 W Avg., I_DQ = 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 – 5 MHz
and f2 +5 MHz.)
–39
–37
dBc
Input Return Loss
(V_DD = 28 Vdc, P_out = 52 W Avg., I_DQ = 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
IRL
—
–12
–9
dB
(1) Each side of device measured separately. Part is internally matched both on input and output.
(2) Measurements made with device in push–pull configuration.
MRF5P21240R6
2
MOTOROLA RF DEVICE DATA
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