MRF18030BR3 Datasheet, PDF (5/8 Pages) Motorola, Inc – THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

f = 1710 MHz
Z_o = 25 Ω
Z_in
f = 1710 MHz
Z_OL*
f = 2110 MHz
f = 2110 MHz
V_DD = 26 V, I_DQ = 250 mA, P_out = 30 W (CW)
f
Z_in
MHz
Ω
Z_OL*
Ω
1710
1785
1805
2.92 + j8.24
3.84 + j9.75
4.15 + j10.38
4.18 + j9.06
4.59 + j9.46
4.98 + j9.06
1840
4.04 + j10.22
6.10 + j7.63
1880
6.12 + j12.29
5.83 + j6.89
1960
6.20 + j12.29
5.55 + j6.33
1990
8.61 + j12.10
5.93 + j6.66
2110
15.19 + j11.85
3.82 + j5.33
Z_in = Complex conjugate of the source impedance.
Z_OL* = Complex conjugate of the optimum load
impedance at a given power, voltage,
bias current and frequency.
Note: Z_OL* was chosen based on tradeoffs between gain,
output power, and drain efficiency.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _in
Z _OL*
Figure 9. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF18030BR3 MRF18030BSR3
5