MRF18030BR3 Datasheet, PDF (3/8 Pages) Motorola, Inc – THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

R2
V_GG
Z9
R3
C7
R1
Z4
RF
INPUT _Z1
Z2
Z3
C2
C1
DUT
V_DD
+
C8
C9
C4
Z5
Z6
C5
RF
Z7
Z8 ^OUTPUT
C6
C3
C1
1.8 pF, 100B Chip Capacitor
Z2
C2
0.8 pF, 100B Chip Capacitor
Z3
C3
0.8 pF, 100B Chip Capacitor
Z4
C4, C5
1.2 pF, 100B Chip Capacitors
Z5
C6, C7, C8 8.2 pF, 100B Chip Capacitors
Z6
C9
220 mF, 63 V Electrolytic Capacitor
Z7
R1
1.0 kΩ, 1/8 W Chip Resistor (0805)
Z8
R2, R3
10 kΩ, 1/8 W Chip Resistors (0805)
Z9
Z1
0.496″ x 0.087″ Microstrip
1.022″ x 0.087″ Microstrip
0.257″ x 0.633″ Microstrip
0.189″ x 0.394″ Microstrip
0.335″ x 0.394″ Microstrip
0.616″ x 0.087″ Microstrip
0.845″ x 0.087″ Microstrip
0.366″ x 0.087″ Microstrip
≈0.500″ x 0.087″ Microstrip
Figure 1. 1930 – 1990 MHz Test Fixture Schematic
VBIAS
Ground
(bias)
R2 R3
C1
C7
R1
C2
C8
C4
C9
C6
C3
C5
MRF18030B
Figure 2. 1930 – 1990 MHz Test Fixture Component Layout
VSUPPLY
Ground
(supply)
MOTOROLA RF DEVICE DATA
MRF18030BR3 MRF18030BSR3
3