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BC16116 Datasheet, PDF (5/8 Pages) Motorola, Inc – Amplifier Transistors PNP Silicon | |||
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10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
â 1.0
STATIC CHARACTERISTICS
TJ = 175°C
BC161-16
VCE = â1.0 V
VCE = â10 V
25°C
â 55°C
â 2.0 â 3.0
â 5.0 â 7.0 â 10
â 20 â 30 â 50 â 70 â 100
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
â 200 â 300 â 500 â 700 â 1000
â 1.0
â 0.8
â 0.6 IC = â 1.0 mA
â 10 mA
â 100 mA
TJ = 25°C
â 500 mA
â 0.4
â 0.2
0
â 0.005 â 0.007 â 0.01 â 0.02 â 0.03 â 0.05 â 0.07 â 0.1
â 0.2 â 0.3 â 0.5 â 0.7 â 1.0
IB, BASE CURRENT (mA)
â 2.0 â 3.0 â 5.0 â 7.0 â 10
Figure 16. Collector Saturation Region
â 20 â 30 â 50
â 1.0
+ 1.0
â 0.8
0
VBE(sat) @ IC/IB = 10
â 0.6
â 1.0
VBE(on) @ VCE = â1.0 V
â 0.4
â 2.0
θVC for VCE(sat)
θVB for VBE
â 0.2
VCE(sat) @ IC/IB = 10
0
â 1.0 â 2.0 â 3.0 â 5.0 â 10 â 20 â 30 â 50 â 100 â 200â 300 â 500 â 1000
IC, COLLECTOR CURRENT (mA)
Figure 17. âOnâ Voltages
â 3.0
â 4.0
â 1.0 â 2.0 â 3.0 â 5.0 â 10 â 20 â 30 â 50 â 100 â 200 â 300 â 500 â 1000
IC, COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
Motorola SmallâSignal Transistors, FETs and Diodes Device Data
5
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