BC16116 Datasheet, PDF (1/8 Pages) Motorola, Inc – Amplifier Transistors PNP Silicon

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC161–16/D
Amplifier Transistors
PNP Silicon
BC161-16
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
– 60
– 60
– 5.0
– 1.0
0.8
4.6
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
3.7
20
Operating and Storage Junction
Temperature Range
TJ, Tstg – 65 to + 200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
R_qJA
219
Thermal Resistance, Junction to Case
R_qJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(IE = 0, VCES = – 60 Vdc)
(IE = 0, VCES = – 60 Vdc, TAmb = 150°C)
Collector – Emitter Breakdown Voltage
(IC = – 100 µAdc, IE = 0)
Collector – Emitter Breakdown Voltage(1)
(IC = – 10 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = – 100 mAdc, IC = 0)
1. Pulsed: Pulse Duration = 300 ms, Duty Cycle = 2.0%.
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
ICES
V(BR)CES
V(BR)CEO
V(BR)EBO
32 ₁
CASE 79–04, STYLE 1
TO–39 (TO–205AD)
Min
Max
Unit
—
—
– 60
– 60
– 5.0
– 100
– 100
—
—
—
nAdc
µAdc
Vdc
Vdc
Vdc
(Replaces BC160–16/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1997