MRF859 Datasheet, PDF (4/6 Pages) Motorola, Inc – NPN SILICON RF POWER TRANSISTOR

TYPICAL CHARACTERISTICS
15
4
14.5
Gpe
3.5
14
3
VCC = 24 Vdc
13.5
IC = 900 mA
2.5
Pout = 6.5 W (CW)
13
2
12.5
1.5
VSWR
12
1
830 840 850 860 870 880 890 900 910
f, FREQUENCY (MHz)
Figure 2. Performance in Broadband Circuit
14
15
12 ^Gpe
14
10
13
VCC = 24 Vdc
8
IC = 900 mA
12
f = 870 MHz
6
11
4
Pout
10
2
9
0
8
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Pin, INPUT POWER (WATTS)
Figure 3. Output Power & Power Gain versus
Input Power
2500
2000
1500
TJ = 150°C
Tf = 60°C
1000
500
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
VCE (Vdc)
Figure 4. DC SOA
2500
2000
1500
TJ = 175°C
Tf = 60°C
1000
500
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
VCE (Vdc)
Figure 5. DC SOA
1.00E+09
1.00E+08
1.00E+07
1.00E+06
1.00E+05
1.02E+08
2.09E+07
5.00E+06
1.37E+06
4.19E+05
1.42E+05
5.24E+04
1.00E+04
1.00E+03
100
2.11E+04
8.94E+03
120 140 160 180 200 220 240 260
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. MTBF Factor versus
Junction Temperature
MRF859 MRF859S
4
MOTOROLA RF DEVICE DATA