MRF859 Datasheet, PDF (2/6 Pages) Motorola, Inc – NPN SILICON RF POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS — continued
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 1 A, VCE = 5 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.9 A, f = 840– 900 MHz, Pout = 6.5 W)
Load Mismatch
(VCE = 24 V, IC = 0.9 A, f = 840 MHz, Pout = 6.5 W,
Load VSWR = 30:1, All Phase Angles)
RF Input Overdrive
(VCE = 24 V, IC = 0.9 A, f = 840 MHz)
No degradation
Third Order Intercept Point
(VCE = 24 V, IC = 0.9 A, f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = –40 dBc)
Noise Figure
(VCE = 24 V, IC = 0.9 A, f = 900 MHz)
Input Return Loss
(VCE = 24 V, IC = 0.9 A, f = 840– 900 MHz, Pout = 6.5 W)
Symbol
Min
Typ
Max
Unit
hFE
20
60
120
—
Cob
13
—
26
pF
Pg
ψ
Pin(over)
ITO
NF
IRL
11.5
13
—
No Degradation in
Output Power
—
—
2
+ 47
+ 48
—
—
6
—
—
—
–9
dB
W
dBm
dB
dB
VCE
(V)
24
IC
f
(A) (MHz)
0.9
800
820
840
860
880
900
920
940
960
Table 1. Common Emitter S–Parameters
S11
|S11|
∠φ
0.906
170
0.902
170
0.897
171
0.894
171
0.893
171
0.893
171
0.894
172
0.897
172
0.903
172
S21
|S21|
∠φ
1.022
12
1.022
7
1.018
3
1.012
–3
1.005
–8
0.988
– 14
0.962
– 20
0.924
– 26
0.884
– 32
S12
|S12|
∠φ
0.016
11
0.015
8
0.013
6
0.011
4
0.009
3
0.007
5
0.005
14
0.008
47
0.004
102
S22
|S22|
∠φ
0.804
0.823
0.845
0.870
0.895
0.920
0.946
0.969
0.987
– 168
– 167
– 167
– 167
– 168
– 168
– 169
– 170
– 172
f
(MHz)
840
870
900
Table 2. Zin and ZOL* versus Frequency
Zin
(Ohms)
1.6
3.3
2
1.5
3.6
1.6
2.2
3.5
1.7
ZOL*
(Ohms)
– 4.1
– 3.3
– 2.7
VCE = 24 V, IC = 0.9 A, Po = 6.5 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
MRF859 MRF859S
2
MOTOROLA RF DEVICE DATA