MRF8372 Datasheet, PDF (4/6 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

Zin
Ohms
ZOL*
Ohms
f
Frequency
MHz
806
VCC = 7.5 V
Pin = 150 mW
8.0 + j1.9
VCC = 12.5 V
Pin = 100 mW
4.0 + j1.2
VCC = 7.5 V
Pout = 806 MHz = 820 mW
Pout = 870 MHz = 635 mW
Pout = 960 MHz = 530 mW
24.7 – j19.2
VCC = 12.5 V
Pout = 806 MHz = 1.05 mW
Pout = 870 MHz = 855 mW
Pout = 960 MHz = 580 mW
20.9 – j31.0
870
5.2 + j3.5
6.0 + j1.9
36.9 – j20.5
32.1 – j26.6
960
6.8 + j4.0
6.1 + j2.5
39.3 – j18.5
36.3 – j25.7
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage, and frequency.
Table 1. Series Equivalent Input/Output Impedance
TYPICAL CHARACTERISTICS
800/900 MHz BAND DATA (continued)
1200
1000
VCC = 12.5 Vdc
900
600
7.5 Vdc
500
Pin = 150 mW
100 mW
300
50 mW
0 _{0 15 30 45 60 75 90 105 120 135 150}
Pin, INPUT POWER (mW)
Figure 3. Output Power versus Input Power
f = 870 MHz
0
800 820 840 860 880 900 920 940 960
f, FREQUENCY (MHz)
Figure 4. Output Power versus Frequency
VCC = 7.5 Vdc
1200
Pin = 150 mW
900
100 mW
600
50 mW
300
f = 870 MHz
06
8
10
12
14
16
VCC, COLLECTOR VOLTAGE (Vdc)
Figure 5. Output Power versus Collector Voltage
1600
1200
Pin = 150 mW
800
100 mW
400
50 mW
VCC = 12.5 Vdc
0
800 820 840 860 880 900 920 940 960
f, FREQUENCY (MHz)
Figure 6. Output Power versus Frequency
MRF8372R1, R2
4
MOTOROLA RF DEVICE DATA