MRF8372 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in 800 MHz
and UHF frequency ranges.
• Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 750 mW
Minimum Gain = 8.0 dB
Efficiency 60% (Typ)
• State–of–the–Art Technology
Fine Line Geometry
Gold Top Metal and Wires
Silicon Nitride Passivated
Ion Implanted Arsenic Emitters
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
• Order MRF8372 in tape and reel packaging by adding suffix:
R1 suffix = 500 units per reel
R2 suffix = 2,500 units per reel
Order this document
by MRF8372/D
MRF8372R1, R2
750 mW, 870 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
CASE 751–05, STYLE 1
SORF (SO–8)
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 75°C (1)
Derate above 75°C
VCEO
VCBO
VEBO
IC
PD
Storage Temperature Range
Maximum Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
TJ, Tstg
TJmax
Symbol
Thermal Resistance, Junction to Case
DEVICE MARKING
MRF8372 = 8372
R_θJC
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Value
16
36
4.0
200
1.67
22.2
– 55 to +150
150
Max
45
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
°C
Unit
°C/W
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
(Replaces MRF837/D)
MRF8372R1, R2
1