MRF21030R3 Datasheet, PDF (4/8 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS

TYPICAL CHARACTERISTICS
60
-5
50
-10
IRL
40
-15
η
30 _{VDD = 28 Vdc, Pout = 30 W (PEP), IDQ = 250 mA}
-20
Two-Tone Measurement, 100 kHz Tone Spacing
20
G_ps
-25
10
-30
IMD
0
-35
2080 2100 2120 2140 2160 2180 2200
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
30
-20
V_DD = 28 Vdc, I_DQ = 250 mA, f = 2140 MHz
25 Channel Spacing (Channel Bandwidth):
-30
4.096 MHz (5 MHz)
20
-40
ACPR
15
-50
G_ps
η
10
-60
5
-70
0
1
2
3
4
5
6
P_out, OUTPUT POWER (WATTS Avg.) CDMA
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
-25
V_DD = 28 Vdc, f = 2140 MHz
-30
Two-Tone Measurement,
100 kHz Tone Spacing
-35
200 mA
-40
250 mA
-45
400 mA
300 mA
-50
350 mA
-55
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
16
400 mA
15
350 mA
300 mA
250 mA
14
200 mA
V_DD = 28 Vdc, f = 2140 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
13
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
-20
V_DD = 28 Vdc, I_DQ = 250 mA, f = 2140 MHz
Two-Tone Measurement,
-30 _{100 kHz Tone Spacing}
3rd Order
-40
-50
5th Order
-60
7th Order
-70
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
15
-22
-24
14.5
-26
G_ps
-28
14
-30
IMD
-32
13.5
13
20
P_out = 30 W (PEP)
I_DQ = 250 mA, f = 2140 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
22
24
26
28
30
32
V_DD, DRAIN VOLTAGE (VOLTS)
-34
-36
-38
34
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MRF21030R3 MRF21030SR3
4
MOTOROLA RF DEVICE DATA