MRF21030R3 Datasheet, PDF (2/8 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 20 µA)
Zero Gate Voltage Drain Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate–Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 100 µAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 250 mA)
Drain–Source On–Voltage
(V_GS = 10 Vdc, I_D = 1 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 1 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
Output Capacitance (1)
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
V_(BR)DSS
I_DSS
I_GSS
V_GS(th)
V_GS(Q)
V_DS(on)
g_fs
C_iss
C_oss
C_rss
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
G_ps
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Two–Tone Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
3rd Order Intermodulation Distortion
IMD
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Input Return Loss
IRL
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Two–Tone Common–Source Amplifier Power Gain
G_ps
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two–Tone Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
3rd Order Intermodulation Distortion
IMD
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Input Return Loss
IRL
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Output Mismatch Stress
Ψ
(V_DD = 28 Vdc, P_out = 30 W CW, I_DQ = 250 mA,
f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
(1) Part is internally matched both on input and output.
Min
Typ
Max
Unit
65
—
—
Vdc
—
—
1
µAdc
—
—
1
µAdc
2
3
4
Vdc
2
3.3
4.5
Vdc
—
0.29
0.4
Vdc
—
2
—
S
—
98.5
—
pF
—
37
—
pF
—
1.3
—
pF
—
13
—
dB
—
33
—
%
—
–30
—
dBc
—
–13
—
dB
12
13
—
dB
31
33
—
%
—
–30
–27.5
dBc
—
–13
–9
dB
No Degradation In Output Power
Before and After Test
MRF21030R3 MRF21030SR3
2
MOTOROLA RF DEVICE DATA