MRF18085ALSR3 Datasheet, PDF (4/8 Pages) Motorola, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
17
16 I_DQ = 1000 mA
15
800 mA
600 mA
14
V_DD = 26 Vdc
f = 1840 MHz
T_C = 25_C
13 400 mA
12
11
10
0
1
10
100
1000
P_out, OUTPUT POWER (WATTS)
Figure 3. Power Gain versus Output Power
17
16
15
14
13
12
32 V
11
28 V
10 _{IDQ = 800 mA}
9 f = 1840 MHz
8 ^{TC = 25_C}
0.1
1
24 V
V_DD = 20 V
10
100
1000
P_out, OUTPUT POWER (WATTS)
Figure 4. Power Gain versus Output Power
17
16 _{TC = 25_C}
15
14 50_C
85_C
V_DD = 26 Vdc
I_DQ = 800 mA
f = 1840 MHz
13
12
11
10
9
1
10
100
1000
P_out, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
120
P_in = 8 W
100
4W
80 _{VDD = 26 Vdc}
I_DQ = 800 mA
60 ^TC ^{= 25_C}
40
20
1W
0.5 W
0
1800
1820
1840
1860
1880
1900
f, FREQUENCY (MHz)
Figure 6. Output Power versus Frequency
17
0
16
G_ps @ 30 W _{Gps @ 80 W −4}
15
−8
14
−12
13
IRL @ 30 W
−16
12
11
10
1750
IRL @ 80 W
1800
1850
−20
V_DD = 26 Vdc
I_DQ = 800 mA ^−24
T_C = 25_C
−28
1900
1950
f, FREQUENCY (MHz)
Figure 7. Power Gain versus Frequency
16
60
G_ps
15
50
14
40
V_DD = 26 Vdc
13 ^{IDQ = 800 mA}
30
f = 1840 MHz
T_C = 25_C
12
20
11
η
10
10
0.1
1
0
10
100
1000
P_out, OUTPUT POWER (WATTS)
Figure 8. Power Gain and Efficiency versus
Output Power
MRF18085AR3 MRF18085ALSR3
5-4
RF Device Data
Freescale Semiconductor