MRF18085ALSR3 Datasheet, PDF (2/8 Pages) Motorola, Inc – RF Power Field Effect Transistors

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain- Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 µAdc)
Zero Gate Voltage Drain Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
V_(BR)DSS
65
—
—
Vdc
I_DSS
—
—
10
µAdc
I_GSS
—
—
1
µAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 200 µAdc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 600 mAdc)
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2 Adc)
V_GS(th)
2
—
4
Vdc
V_GS(Q)
2.5
3.9
4.5
Vdc
V_DS(on)
—
0.15
—
Vdc
g_fs
—
6.0
—
S
Dynamic Characteristics
Reverse Transfer Capacitance ⁽¹⁾
(V_DS = 26 Vdc, V_GS = 0, f = 1 MHz)
C_rss
—
3.6
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Common- Source Amplifier Power Gain @ 85 W ⁽²⁾
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 1805 - 1880 MHz)
Drain Efficiency @ 85 W ⁽²⁾
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 1805 - 1880 MHz)
Input Return Loss @ 85 W ⁽²⁾
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 1805 - 1880 MHz)
Power Output, 1 dB Compression Point
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 1805 - 1880 MHz)
Output Mismatch Stress @ P1dB
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 1805 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
G_ps
η
IRL
P1dB
Ψ
13.5
15
48
52
—
- 12
83
90
—
dB
—
%
-9
dB
—
Watts
No Degradation In Output Power
Before and After Test
1. Part is internally matched both on input and output.
2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring
batch- to - batch consistency.
MRF18085AR3 MRF18085ALSR3
5-2
RF Device Data
Freescale Semiconductor