MRF166C Datasheet, PDF (4/6 Pages) Motorola, Inc – MOSFET BROADBAND RF POWER FETs

TYPICAL CHARACTERISTICS
35
30
25
f = 400 MHz
20
500 MHz
15
10
VDS = 28 V
IDQ = 100 mA
5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Pin, INPUT POWER (WATTS)
Figure 4. Output Power versus Input Power
16
14
12
10
f = 400 MHz
8
6
4
VDS = 13.5 V
2
IDQ = 100 mA
00
0.1 0.2 0.3 0.4 0.5
0.6 0.7 0.8
Pin, INPUT POWER (WATTS)
Figure 5. Output Power versus Input Power
32
f = 400 MHz
28
IDQ = 100 mA
24
Pin = 0.8 W
20
0.4 W
16
12
0.2 W
8
4
0
12 14
16 18
20
22
24
VDS, DRAIN–SOURCE (VOLTS)
26 28
Figure 6. Output Power versus Voltage
MRF166C
4
200
Zin
100
400 _{f = 500 MHz}
f = 500 MHz
400
200
ZOL*
100
Zo = 50 Ω
VDD = 28 V, IDQ = 100 mA
f
Zin
MHz
OHMS
ZOL*
OHMS
(Pout = 20 W)
100
11.0 – j21.0 8.50 – j10.0
200
4.20 – j12.6 6.00 – j9.00
400
1.90 – j5.80 4.50 – j6.70
500
1.50 – j4.10 4.20 – j5.40
ZOL* = Conjugate of the optimum load
impedance into which the device output
operates at a given output power, voltage and
frequency.
Figure 7. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA