MRF166C Datasheet, PDF (2/6 Pages) Motorola, Inc – MOSFET BROADBAND RF POWER FETs

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 5.0 mA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
IDSS
Gate–Source Leakage Current
(VGS = 40 V, VDS = 0 V)
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 25 mA)
VGS(th)
Forward Transconductance
gfs
(VDS = 10 V, ID = 1.5 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Coss
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Crss
FUNCTIONAL CHARACTERISTICS
Noise Figure
NF
(VDD = 28 V, f = 30 MHz, IDQ = 50 mA)
Common Source Power Gain
Gps
(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA)
Drain Efficiency
η
(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA)
Electrical Ruggedness
(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA,
ψ
Load VSWR 30:1 at All Phase Angles)
Min
Typ
Max
Unit
65
—
—
V
—
—
1.0
mA
—
—
1.0
µA
1.0
3.0
6.0
V
600
800
—
mhos
—
30
—
pF
—
35
—
pF
—
4.5
—
pF
—
2.5
—
dB
14
17
—
dB
50
55
—
%
No Degradation in Output Power
MRF166C
2
MOTOROLA RF DEVICE DATA