MRF158 Datasheet, PDF (4/6 Pages) Motorola, Inc – TMOS BROADBAND RF POWER FET

TYPICAL CHARACTERISTICS
10
1
5
Coss
2
Ciss
1
0.1
0.5
Crss
0.2
VGS = 0 V
f = 1 MHz
0.1 ₀
0.01
5
10
15
20
25
1
VDS,DRAIN–SOURCE VOLTAGE (VOLTS)
10
100
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain–Source Voltage
Figure 3. DC Safe Operating Area
3.2
3.2
2.8
f = 400 MHz
2.8
Pin = 80 mW
2.4
2.4
500 MHz
50 mW
2
2
1.6
1.6
20 mW
1.2
1.2
VDS = 28 V
f = 400 MHz
0.8
IDQ = 100 mA
0.8
IDQ = 100 mA
0.4
0.4
0
20
40
60
80
100
Pin, INPUT POWER (mW)
Figure 4. Output Power versus Input Power
0
10 12 14 16 18 20 22 24 26 28 30
VDS, DRAIN–SOURCE VOLTAGE (VOLTS))
Figure 5. Output Power versus Voltage
VDS
(Volts)
28
ID
(mA)
100
f
(MHz)
5
10
30
50
100
200
300
400
500
600
700
800
900
1000
Table 1. Typical Common Emitter S–Parameters
S11
|S11|
∠φ
1.00
– 2.0
1.00
– 2.0
1.00
– 7.0
1.00
–11
0.98
– 21
0.93
– 41
0.88
– 58
0.83
– 75
0.79
– 87
0.75
– 99
0.73
–110
0.72
–120
0.71
–130
0.71
–139
S21
|S21|
∠φ
3.84
–179
3.81
179
3.74
174
3.72
170
3.62
159
3.28
137
2.88
120
2.57
104
2.24
91
1.94
78
1.72
68
1.52
58
1.35
48
1.18
40
S12
|S12|
0.003
0.004
0.011
0.018
0.034
0.061
0.077
0.088
0.090
0.084
0.077
0.067
0.055
0.043
∠φ
73
83
81
78
70
52
39
27
17
8.0
2.0
– 3.0
– 6.0
– 4.0
S22
|S22|
∠φ
0.97
– 2.0
0.97
– 2.0
0.97
– 6.0
0.96
– 9.0
0.95
–19
0.90
– 35
0.86
– 50
0.81
– 63
0.78
– 74
0.75
– 84
0.75
– 93
0.75
– 99
0.74
–108
0.73
–114
MRF158
4
MOTOROLA RF DEVICE DATA