MRF158 Datasheet, PDF (1/6 Pages) Motorola, Inc – TMOS BROADBAND RF POWER FET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF TMOS^® Line
Power Field Effect Transistor
N–Channel Enhancement Mode
Designed for wideband large–signal amplifier and oscillator applications to
500 MHz.
• Guaranteed 28 Volt, 400 MHz Performance
Output Power = 2.0 Watts
Minimum Gain = 16 dB
Efficiency = 55% (Typical)
• Grounded Source Package for High Gain and Excellent Heat
Dissipation (MRF158R)
• Facilitates Manual Gain Control, ALC and Modulation
Techniques
• 100% Tested for Load Mismatch at All Phase Angles with
30:1 VSWR
• Excellent Thermal Stability, Ideally Suited for Class A
Operation
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
D
Order this document
by MRF158/D
MRF158
2.0 W, to 500 MHz
TMOS
BROADBAND
RF POWER FET
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
G
S
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
R_θJC
CASE 305A–01, STYLE 2
Value
65
65
±40
0.5
8.0
45
– 65 to +150
200
Max
13.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
°C
Unit
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF158
1