MGW20N60D Datasheet, PDF (4/6 Pages) Motorola, Inc – Insulated Gate Bipolar Transistor with Anti-Parallel Diode

MGW20N60D
4000
VCE = 0 V
3200
Cies
2400
TJ = 25°C
1600
800
Coes
Cres
0
0
5
10
15
20
25
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
4
VCC = 360 V
VGE = 15 V
3.2 TJ = 125°C
IC = 20 A
2.4
15 A
1.6
10 A
0.8
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
Figure 7. Total Switching Losses versus
Gate Resistance
3
VCC = 360 V
2.5
VGE = 15 V
RG = 20 Ω
TJ = 125°C
2
1.5
1
0.5
0
0
5
10
15
20
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
16
12
Q1
8
QT
Q2
4
TJ = 25°C
IC = 20 A
0
0
20
40
60
80
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
4
VCC = 360 V
3.5 VGE = 15 V
RG = 20 Ω
3
2.5
IC = 20 A
2
15 A
1.5
10 A
1
0.5
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Total Switching Losses versus
Junction Temperature
1.6
VCC = 360 V
VGE = 15 V
TJ = 125°C
1.2
0.8
IC = 20 A
15 A
10 A
0.4
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
Figure 10. Turn–Off Losses versus
Gate Resistance
4
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