MGW20N60D Datasheet, PDF (3/6 Pages) Motorola, Inc – Insulated Gate Bipolar Transistor with Anti-Parallel Diode

MGW20N60D
ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
Reverse Recovery Stored Charge
Reverse Recovery Time
(IF = 20 Adc, VR = 360 Vdc,
dIF/dt = 200 A/µs)
(IF = 20 Adc, VR = 360 Vdc,
dIF/dt = 200 A/µs, TJ = 125°C)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
trr
ta
tb
QRR
trr
ta
tb
QRR
LE
—
117
—
ns
—
70
—
—
47
—
—
1.2
—
µC
—
166
—
ns
—
98
—
—
68
—
—
1.9
—
µC
nH
—
13
—
60
TJ = 25°C
40
TYPICAL ELECTRICAL CHARACTERISTICS
VGE = 20 V
17.5 V
12.5 V
15 V
10 V
60
TJ = 125°C
40
VGE = 20 V
17.5 V
20
20
12.5 V
15 V
10 V
0
0
2
4
6
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25°C
40
VCE = 100 V
5 µs PULSE WIDTH
30
20
10
TJ = 125°C
25°C
0
5
6
7
8
9
10
11
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
0
0
2
4
6
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics, TJ = 125°C
3.2
VGE = 15 V
80 µs PULSE WIDTH
IC = 20 A
2.8
15 A
2.4
10 A
2
– 50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
Motorola TMOS Power MOSFET Transistor Device Data
3