PZTA14T1 Datasheet, PDF (3/6 Pages) Motorola, Inc – SOT-223 PACKAGE MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT

TYPICAL ELECTRICAL CHARACTERISTICS
PZTA14T1
200 k
100 k
70 k
50 k
30 k
20 k
TJ = 125°C
25°C
10 k
7.0 k
5.0 k _{– 55°C}
3.0 k
2.0 k
5.0 7.0 10
VCE = 5.0 V
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
4.0
VCE = 5.0 V
f = 100 MHz
2.0 ^{TJ = 25°C}
1.0
0.8
0.6
0.4
0.2
0.5 1.0 2.0 0.5 10 20
50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 2. High Frequency Current Gain
1.6 _{TJ = 25°C}
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
0.8
VCE(sat) @ IC/IB = 1000
0.6
5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
20
TJ = 25°C
10
7.0
Cibo
5.0
Cobo
3.0
2.0
0.04
0.1 0.2 0.4 1.0 2.0 4.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
20 40
3.0
2.5
IC = 10 mA 50 mA
2.0
250 mA 500 mA
TJ = 25°C
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IB, BASE CURRENT (µA)
Figure 5. Collector Saturation Region
–1.0
*APPLIES FOR IC/IB ≤ hFE/3.0
25°C to 125°C
– 2.0 ^{*RθVC for VCE(sat)}
– 55°C to 25°C
– 3.0
– 4.0
θ_VB for VBE
– 5.0
25°C to 125°C
– 55°C to 25°C
– 6.0
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
200 300 500
Figure 6. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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