PZTA14T1 Datasheet, PDF (2/6 Pages) Motorola, Inc – SOT-223 PACKAGE MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT

PZTA14T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CBO
30
—
Collector-Emitter Breakdown Voltage
(IC = 100 µAdc, IB = 0)
V(BR)CES
30
—
Emitter-Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)EBO
10
—
Collector-Base Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
—
Emitter-Base Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
—
—
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
10,000
—
20,000
—
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
—
—
Base-Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
VBE(on)
—
—
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc)
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
fT
125
—
Max
Unit
—
Vdc
—
Vdc
—
Vdc
0.1
µAdc
0.1
µAdc
—
—
—
1.5
Vdc
2.0
Vdc
—
MHz
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data