PBF259 Datasheet, PDF (3/4 Pages) Motorola, Inc – High Voltage Transistors

200
VCE = 10 Vdc
TJ = +125°C
100
50
30
20
1.0
25°C
–55°C
2.0
3.0
PBF259 PBF259S
5.0
7.0
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
50
70
100
100
50
20
Ceb
10
5.0
2.0
1.0
0.2
Ccb
0.5 1.0 2.0 5.0 10 20 50 100 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitances
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
50 70 100
100
70
50
TJ = 25°C
30
VCE = 20 V
f = 20 MHz
20
10
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 3. Current–Gain — Bandwidth Product
500
200 ^{TA = 25°C}
100 µs
10 µs
1.0 ms
100
TC = 25°C
50
100 ms
20
10
CURRENT LIMIT
THERMAL LIMIT
5.0
(PULSE CURVES @ TC = 25°C)
SECOND BREAKDOWN LIMIT
2.0
CURVES APPLY
1.0
BELOW RATED VCEO
0.5
PBF259S
PBF259
0.5 1.0 2.0 5.0 10 20 50 100 200 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Forward Bias
Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3