PBF259 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Voltage Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PBF259/D
High Voltage Transistors
NPN Silicon
COLLECTOR
3
2
BASE
PBF259
PBF259S
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
PBF259,S
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
300
Vdc
300
Vdc
5.0
Vdc
500
mAdc
625
Watts
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 250 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 10 Vdc)
v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO 300
V(BR)CBO 300
V(BR)EBO
5.0
ICBO
—
IEBO
—
ICEO
—
Max
Unit
—
Vdc
—
Vdc
—
Vdc
50
nAdc
20
nAdc
50
nAdc
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1