MTW45N10E Datasheet, PDF (3/8 Pages) Motorola, Inc – TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM

TYPICAL ELECTRICAL CHARACTERISTICS
MTW45N10E
90
TJ = 25°C
80
VGS = 10 V
8V
7V
70
9V
60
50
6V
40
30
5V
20
10
4V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
90
VDS ≥ 10 V
80
70
60
TJ = – 55°C
25°C
50
40
100°C
30
20
10
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.05
VGS = 10 V
0.04
TJ = 100°C
0.03
25°C
0.02
– 55°C
0.01
0 10 20 30 40 50 60 70 80 90
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.032
0.030
TJ = 25°C
0.028
VGS = 10 V
0.026
15 V
0.024
0.022
0 10 20 30 40 50 60 70 80 90
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 22.5 A
1.6
10000
VGS = 0 V
1000
TJ = 125°C
1.2
100
100°C
0.8
0.4
– 50 – 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
10
25°C
1.0
0
20
40
60
80
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3