MTD6N10E Datasheet, PDF (3/10 Pages) Motorola, Inc – TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM

TYPICAL ELECTRICAL CHARACTERISTICS
MTD6N10E
12
TJ = 25°C
10
8
VGS = 10 V
12
9V
VDS ≥ 10 V
10
8V
8
TJ = – 55°C
25°C
100°C
6
7V
4
6V
2
5V
0
0
1
2
3
4
5
6
7
8
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
6
4
2
0
23
4
5
6
7
8
9
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.65
VGS = 10 V
0.55
0.45
TJ = 100°C
0.35
25°C
0.25
– 55°C
0.15
0
2
4
6
8
10
12
14
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.45
TJ = 25°C
0.40
0.35
VGS = 10 V
0.30
15 V
0.25
0.20
02
4
6
8 10 12 14 16
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.8
VGS = 10 V
1.6 ^{ID = 3 A}
1.4
1.2
1.0
0.8
0.6
– 50 – 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
100
VGS = 0 V
10
TJ = 125°C
100°C
25°C
1
0
20
40
60
80
100
120
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3