MTD1302 Datasheet, PDF (3/12 Pages) Motorola, Inc – TMOS POWER FET 20 AMPERES 30 VOLTS

TYPICAL ELECTRICAL CHARACTERISTICS
MTD1302
40
10 V
5.0 V
35
4.0 V
30
25
TJ = 25°C
20
15
10
5.0
0
0
VGS = 3.0 V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
30
25
VDS ≥ 10 V
20
15
10
TJ = 125°C
25°C
5.0
– 55°C
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.03
VGS = 10 V
TJ = 100°C
0.02
25°C
– 55°C
0.01
10
15
20
25
30
35
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus
Drain Current and Temperature
3.0
ID = 10 A
2.0
VGS = 10 V
1.0
0.04
0.035
TJ = 25°C
0.03
0.025
VGS = 4.5 V
0.02
10 V
0.015
0.01
0.005
0
40
10
15
20
25
30
35
40
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1000
100
TJ = 125°C
10
100°C
25°C
1.0
0
–50 –25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
0.1
5.0
10
15
20
25
30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3