MTD1302 Datasheet, PDF (2/12 Pages) Motorola, Inc – TMOS POWER FET 20 AMPERES 30 VOLTS

MTD1302
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
30
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
—
Gate–Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IGSS
—
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
1.0
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
—
—
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 10 Adc, TJ = 150°C)
VDS(on)
—
—
Forward Transconductance
(VDS = 10 Vdc, ID = 10 Adc)
gFS
10
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Gate Charge
(VDD = 15 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
(VDS = 24 Vdc, ID = 20 Adc,
VGS = 5.0 Vdc)
td(on)
—
tr
—
td(off)
—
tf
—
QT
—
Q1
—
Q2
—
Q3
—
QT
—
(VDS = 24 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
Q1
—
Q2
—
Q3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
VSD
(IS = 20 Adc, VGS = 0 Vdc)
—
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
—
Reverse Recovery Time
trr
—
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
—
tb
—
Reverse Recovery Stored Charge
QRR
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
—
—
µAdc
—
10
—
100
nAdc
—
100
1.5
0.019
0.026
0.38
—
16
2.0
0.022
0.029
0.5
0.33
—
Vdc
Ohms
Vdc
Mhos
755
1162
pF
370
518
102
204
7.2
15
ns
52
104
45
90
73
146
14.5
21.8
nC
2.2
—
8.8
—
6.8
—
27
40.5
nC
2.2
—
10
—
7.2
—
Vdc
0.83
1.1
0.79
—
38
—
ns
19
—
20
—
36
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data