MTB75N03HDL Datasheet, PDF (3/12 Pages) Motorola, Inc – TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS

TYPICAL ELECTRICAL CHARACTERISTICS
MTB75N03HDL
150
VGS = 10 V
8V
120
6V
5 V 4.5 V TJ = 25°C
4V
150
VDS ≥ 10 V
120
90
3.5 V
60
30
3V
2.5 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
90
60
100°C
25°C
30
TJ = –55°C
0
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.01
VGS = 5 V
0.008
0.006
0.004
TJ = 100°C
25°C
– 55°C
0.002
0
30
60
90
120
150
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.009
0.008
TJ = 25°C
0.007
0.006
0.005
VGS = 5 V
10 V
0.004
0
25
50
75
100
125
150
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2
VGS = 10 V
1.6
ID = 37.5 A
1.2
0.8
0.4
0
–50 –25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
10000
TJ = 125°C
1000
100°C
100
10
25°C
VGS = 0 V
1
0
5
10
15
20
25
30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3