MRF898 Datasheet, PDF (3/4 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

100
850 MHz
80
900 MHz
60
960 MHz
40
20
VCC = 24 V
0
6
8
10 12
14 16 18
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
100
Pin = 16 W
80
12 W
60
10 W
8W
40
Pin = 14 W
20
VCC = 24 V
0
850
900
950
f, FREQUENCY (MHz)
Figure 3. Output Power versus Frequency
100
Pin = 14 W
12 W
80
60
10 W
40
8W
20
f = 900 MHz
0
20
22
24
26
28
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
10
8
GPA
6
η_c
4
Pin = 12 W
VCC = 24 V
2
VSWR
0
850
900
f, FREQUENCY (MHz)
100
90
80
70
60
50
40
1.3 ₃₀
1.2 ₂₀
1.1:1 ₁₀
0
960
Figure 5. Typical Broadband Circuit Performance
Po = 60 W, VCC = 24 V
F
Zin
MHz
Ohms
ZOL*
Ohms
850
11.2 + j2.3
4.0 + j3.9
900
8.2 – j1.0
4.4 + j1.8
960
4.7 – j2.0
5.3 + j3.7
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device operates at a given
ZOL* = output power, voltage and frequency.
f = 850 MHz
960
ZOL*
900
f = 850 MHz
Zin
900
960
Figure 6. Input/Output Impedance versus Frequency
MOTOROLA RF DEVICE DATA
MRF898
41