MRF898 Datasheet, PDF (1/4 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for 24 Volt UHF large–signal, common base amplifier applications
in industrial and commercial FM equipment operating in the range of
850 – 960 MHz.
• Motorola Advanced Amplifier Concept Package
• Specified 24 Volt, 900 MHz Characteristics
Output Power = 60 Watts
Power Gain = 7.0 dB Min
Efficiency = 60% Min
• Double Input/Output Matched for Wideband Performance and Simplified
External Matching
• Series Equivalent Large–Signal Characterization
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Silicon Nitride Passivated
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF898/D
MRF898
60 W, 850 – 960 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0, TC = 25°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Symbol
R_θJC
Min
30
55
4.0
—
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 333A–02, STYLE 1
Value
30
55
4.0
10
175
1.0
– 65 to +150
Max
1.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Unit
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
10
mAdc
(continued)
MRF898
39