MRF5811LT1 Datasheet, PDF (3/8 Pages) Motorola, Inc – LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON

TYPICAL CHARACTERISTICS
12
5
10
8
6
Cib
4
2
f = 1 MHz
0
1
2
3
VEB, EMITTER–BASE VOLTAGE (VOLTS)
Figure 1. Cib Input Capacitance versus Voltage
4
3
Cob
2
Ccb
1
f = 1 MHz
0
0
2
4
6
8
10
Vcb, COLLECTOR–BASE (VOLTS)
Figure 2. Ccb, Cob Collector–Base
Capacitance versus Voltage
VBE
RF INPUT
*BIAS
TEE
*HP11590B BIAS
*NETWORK
DUT
**SLUG TUNER
**MICROLAB/FXR
**SF–11N FOR f < 1 GHz
**SF–31N FOR f > 1 GHz
***
**SLUG TUNER
*BIAS
TEE
***HP11608A TRANSISTOR FIXTURE
Figure 3. MRF5811L Functional Circuit Schematic
VCE = 10 Vdc
RF OUTPUT
8
6
4
2
VCE = 6 Vdc
f = 1 GHz
0
0
20
40
60
80
100
IC, COLLECTOR CURRENT (mA)
Figure 4. Gain–Bandwidth Product versus
Collector Current
24
22
20
18
16
14
12
10
8
6
0
0.2
GU(max)
|S21|2
0.3 0.5
1
23
f, FREQUENCY (GHz)
VCE = 6 Vdc
IC = 50 mA
5
10
Figure 5. GU(max) Maximum Unilateral Gain,
|S21|2 versus Frequency
MOTOROLA RF DEVICE DATA
MRF5811LT1
3