MRF5811LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
High-Frequency Transistor
Designed for high current, low power amplifiers up to 1.0 GHz.
• Low Noise (2.0 dB @ 500 MHz)
• Low Intermodulation Distortion
• High Gain
• State–of–the–Art Technology
Fine Line Geometry
Arsenic Emitters
Gold Top Metallization
Nichrome Thin–Film Ballasting Resistors
• Excellent Dynamic Range
• Fully Characterized
• High Current–Gain Bandwidth Product
• Available in Tape and Reel by Adding T1 Suffix to Part Number.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
Order this document
by MRF5811LT1/D
MRF5811LT1
IC = 200 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Thermal Resistance θJC (1)
Total Device Dissipation @ TC = 75°C
Derate above TC = 75°C
Storage Junction Temperature Range
Maximum Junction Temperature
DEVICE MARKING
VCEO
VCBO
VEBO
IC
R_θJC
PD
Tstg
TJmax
MRF5811L = 20
NOTES:
1. Case temperature measured on collector lead immediately adjacent to body of package.
CASE 318A–05, STYLE 1
Value
18
36
2.5
200
106
0.71
9.4
– 55 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
°C/W
Watts
mW/°C
°C
°C
REV 1
© MMoOtorToOla,RInOc.L1A99R5 F DEVICE DATA
MRF5811LT1
1