MRF393 Datasheet, PDF (3/4 Pages) Motorola, Inc – BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON

CLASS C
f = 100 MHz
140
120
100
225 MHz
400 MHz
500 MHz
80
60
40
20
VCC = 28 V
0
0 2 4 6 8 10 12 14 16 18 20
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
80
f = 100 MHz
70
60
225 MHz
400 MHz
50
500 MHz
40
30
20
10
VCC = 13.5 V
0
0 2 4 6 8 10 12 14 16 18 20
Pin, INPUT POWER (WATTS)
Figure 3. Output Power versus Input Power
CLASS C
120
120
Pin = 10 W
8W
100
100
6W
80
80
60
60
Pin = 16 W
12 W
8W
40
20
12
f = 225 MHz
16
20
24
28
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
40
20
12
f = 500 MHz
16
20
24
28
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 5. Output Power versus Supply Voltage
2 ^{f = 100 MHz}
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
2 ^{ZOL* = given output power, voltage and frequency.}
4
ZOL*
4
225
400 ^{2 500}
Zin
6
8
4
500
400
225
6
VCC = 28 V, Pout = 100 W
Zo = 20 Ω
f MHz
Zin
100 0.85 + j0
ZOL*
7.8 – j5.6
f = 100 MHz
8
225 0.58 + j2.6 5.0 – j3.2
400 3.00 + j5.9 3.2 – j0.6
500 4.80 + j3.0 2.9 + j1.2
NOTE: Zin & ZOL* are given from base–to–base
NOTE: and collector–to–collector respectively.
Figure 6. Series Equivalent Input/Output Impedance
140
120
100
80
60
40
20
0
0
f = 500 MHz
VCC = 28 V
ICQ = 200 mA
2 4 6 8 10 12 14 16 18 20
Pin, INPUT POWER (WATTS)
Figure 7. Class AB Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
MRF393
3