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MRF393 Datasheet, PDF (1/4 Pages) Motorola, Inc – BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon Push-Pull
RF Power Transistor
. . . designed primarily for wideband largeâsignal output and driver amplifier
stages in the 30 to 500 MHz frequency range.
⢠Specified 28 Volt, 500 MHz Characteristics â
Output Power = 100 W
Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C)
Efficiency = 55% (Typ)
⢠BuiltâIn Input Impedance Matching Networks for Broadband Operation
⢠PushâPull Configuration Reduces Even Numbered Harmonics
⢠Gold Metallization System for High Reliability
⢠100% Tested for Load Mismatch
⢠Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
2
6
5, 8
1, 4
7
3
The MRF393 is two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a pushâpull configuration.
PUSHâPULL TRANSISTORS
Order this document
by MRF393/D
MRF393
100 W, 30 to 500 MHz
CONTROLLED âQâ
BROADBAND PUSHâPULL
RF POWER TRANSISTOR
NPN SILICON
CASE 744Aâ01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
30
60
4.0
16
270
1.54
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Junction Temperature
Tstg
â 65 to +150
°C
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.65
°C/W
NOTE:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF pushâpull
amplifier.
REV 7
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF393
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