MRF21045 Datasheet, PDF (3/12 Pages) Motorola, Inc – RF Power Field Effect Transistors

Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS — continued (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) — continued
Two - Tone Common - Source Amplifier Power Gain
G_ps
—
14.9
—
dB
(V_DD = 28 Vdc, P_out = 45 W PEP, I_DQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two - Tone Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 45 W PEP, I_DQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
—
36
—
%
Intermodulation Distortion
IMD
—
- 30
—
dBc
(V_DD = 28 Vdc, P_out = 45 W PEP, I_DQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two - Tone Input Return Loss
IRL
—
- 12
—
dB
(V_DD = 28 Vdc, P_out = 45 W PEP, I_DQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
P_out, 1 dB Compression Point
(V_DD = 28 Vdc, I_DQ = 500 mA, f = 2170 MHz)
P1dB
—
50
—
W
MOTOROLA RF DEVICE DATA
MRF21045LR3 MRF21045LSR3
For More Information On This Product,
Go to: www.freescale.com
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