MRF21045 Datasheet, PDF (2/12 Pages) Motorola, Inc – RF Power Field Effect Transistors

Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 µAdc)
Zero Gate Voltage Drain Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
V_(BR)DSS
65
—
—
Vdc
I_DSS
—
—
10
µAdc
I_GSS
—
—
1
µAdc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 100 µAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 500 mAdc)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 1 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 1 Adc)
V_GS(th)
2
V_GS(Q)
3
V_DS(on)
—
g_fs
—
—
4
Vdc
3.9
5
Vdc
0.19
0.21
Vdc
3
—
S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
C_rss
—
1.8
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA. Peak/Avg. ratio = 8.3 dB @ 0.01% Probability
on CCDF.
Common - Source Amplifier Power Gain
G_ps
13.5
15
—
dB
(V_DD = 28 Vdc, P_out = 10 W Avg., I_DQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 10 W Avg., I_DQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
21
23.5
—
%
Third Order Intermodulation Distortion
IM3
(V_DD = 28 Vdc, P_out = 10 W Avg., I_DQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz Bandwidth at f1 - 10 MHz and f2 +10 MHz.)
—
- 37.5
- 35
dBc
Adjacent Channel Power Ratio
ACPR
—
(V_DD = 28 Vdc, P_out = 10 W Avg., I_DQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz Bandwidth at f1 - 5 MHz and f2 +5 MHz.)
- 41
- 38
dBc
Input Return Loss
IRL
—
- 12
-9
dB
(V_DD = 28 Vdc, P_out = 10 W Avg., I_DQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Output Mismatch Stress
(V_DD = 28 Vdc, P_out = 45 W CW, I_DQ = 500 mA, f = 2170 MHz
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF21045LR3 MRF21045LSR3
2
MOTOROLA RF DEVICE DATA
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