MRF19085 Datasheet, PDF(3/12 Page) Motorola, Inc – RF Power Field Effect Transistors

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MRF19085 Datasheet, PDF (3/12 Pages) Motorola, Inc – RF Power Field Effect Transistors

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Freescale Semiconductor, Inc.

ELECTRICAL CHARACTERISTICS â continued (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

FUNCTIONAL TESTS (In Motorola Test Fixture)

Two - Tone Common - Source Amplifier Power Gain

Gps

(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and

1990 MHz, Tone Spacing = 100 kHz)

Two - Tone Drain Efficiency

Î·

(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and

1990 MHz, Tone Spacing = 100 kHz)

3rd Order Intermodulation Distortion

IMD

- 31

dBc

(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and

1990 MHz, Tone Spacing = 100 kHz)

Input Return Loss

IRL

- 12

(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and

1990 MHz, Tone Spacing = 100 kHz)

Pout, 1 dB Compression Point

(VDD = 26 Vdc, IDQ = 850 mA, f = 1990 MHz)

P1dB

MOTOROLA RF DEVICE DATA

MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3

For More Information On This Product,

Go to: www.freescale.com

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