MRF19085 Datasheet, PDF (2/12 Pages) Motorola, Inc – RF Power Field Effect Transistors

Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 µAdc)
Zero Gate Voltage Drain Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
V_(BR)DSS
65
—
—
Vdc
I_DSS
—
—
10
µAdc
I_GSS
—
—
1
µAdc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 200 µAdc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 850 mAdc)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2 Adc)
V_GS(th)
2
V_GS(Q)
2.5
V_DS(on)
—
g_fs
—
—
4
Vdc
3.5
4.5
Vdc
0.18
0.210
Vdc
6
—
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V_DS = 26 Vdc, V_GS = 0, f = 1.0 MHz)
C_rss
—
3.6
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(V_DD = 26 Vdc, P_out = 18 W Avg., I_DQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
G_ps
12
13
—
dB
Drain Efficiency
(V_DD = 26 Vdc, P_out = 18 W Avg., I_DQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
η
21
23
—
%
3rd Order Intermodulation Distortion
IMD
(V_DD = 26 Vdc, P_out = 18 W Avg., I_DQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured
over 1.2288 MHz bandwidth @ f1 - 2.5 MHz and f2 = +2.5 MHz)
—
- 36.5
- 35
dBc
Adjacent Channel Power Ratio
ACPR
—
(V_DD = 26 Vdc, P_out = 18 W Avg., I_DQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR
measured over 30 kHz bandwidth @ f1 - 885 MHz and f2 =+885 MHz)
- 51
- 48
dBc
Input Return Loss
(V_DD = 26 Vdc, P_out = 18 W Avg., I_DQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
IRL
—
- 12
-9
dB
Output Mismatch Stress
Ψ
(V_DD = 26 Vdc, P_out = 90 W CW, I_DQ = 850 mA, f = 1930 MHz, VSWR
= 5:1, All Phase Angles at Frequency of Tests)
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
MOTOROLA RF DEVICE DATA
2
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