MRF150 Datasheet, PDF (3/6 Pages) Motorola, Inc – N-CHANNEL MOS LINEAR RF POWER FET

25
250
200
20
150
VDD = 50 V
100
15
VDD = 50 V
IDQ = 250 mA
10
Pout = 150 W (PEP)
50
00
250
200
40 V
IDQ = 250 mA
10
20
30
5
150
VDD = 50 V
100
50
40
V
IDQ = 250 mA
0
0
2
5
10
20
50
100
200
0
1
2
3
4
5
6
f, FREQUENCY (MHz)
Pin, INPUT POWER (WATTS)
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Input Power
– 30
1000
– 35
150 MHz
– 40
d3
800
VDS = 30 V
– 45
d5
15 V
– 50
600
VDD = 50 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz
– 30
400
– 35
30 MHz
– 40
200
d3
– 45
– 50
d5
0
0
20 40 60 80 100 120 140 160
0
Pout, OUTPUT POWER (WATTS PEP)
5
10
15
20
ID, DRAIN CURRENT (AMPS)
Figure 4. IMD versus Pout
Figure 5. Common Source Unity Gain Frequency
versus Drain Current
10
8
6
4
2
VDS = 10 V
gfs = 5 mhos
0
0
2
4
6
8
10
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 6. Gate Voltage versus
Drain Current
MOTOROLA RF DEVICE DATA
MRF150
3