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MRF150 Datasheet, PDF (1/6 Pages) Motorola, Inc – N-CHANNEL MOS LINEAR RF POWER FET | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
NâChannel EnhancementâMode
Designed primarily for linear largeâsignal output stages up to 150 MHz
frequency range.
⢠Specified 50 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
⢠Superior High Order IMD
⢠IMD(d3) (150 W PEP) â â 32 dB (Typ)
⢠IMD(d11) (150 W PEP) â â 60 dB (Typ)
⢠100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
D
Order this document
by MRF150/D
MRF150
150 W, to 150 MHz
NâCHANNEL MOS
LINEAR RF POWER
FET
G
S
CASE 211â11, STYLE 2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainâSource Voltage
DrainâGate Voltage
GateâSource Voltage
Drain Current â Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
125
VDGO
125
VGS
± 40
ID
16
PD
300
1.71
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg
â 65 to +150
°C
TJ
200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.6
°C/W
Handling and Packaging â MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF150
1
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